AXTI Share Price

Open 9.15 Change Price %
High 9.30 1 Day 0.18 1.97
Low 9.05 1 Week 0.00 0.00
Close 9.30 1 Month 0.25 2.76
Volume 303957 1 Year 4.55 95.79
52 Week High 9.70
52 Week Low 4.35
AXTI Important Levels
Resistance 2 9.53
Resistance 1 9.44
Pivot 9.22
Support 1 9.16
Support 2 9.07
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AXTI Technical Analysis 5
As on 31st Oct 2017 AXTI Share Price closed @ 9.30 and we RECOMMEND Strong Buy for LONG-TERM with Stoploss of 6.88 & Strong Buy for SHORT-TERM with Stoploss of 8.54 we also expect STOCK to react on Following IMPORTANT LEVELS.
AXTI Target for May
1st Target up-side 10.42
2nd Target up-side 11.2
3rd Target up-side 11.98
1st Target down-side 8.18
2nd Target down-side 7.4
3rd Target down-side 6.62
AXTI Other Details
Segment EQ
Market Capital 97057368.00
Sector Technology
Industry Semiconductor - Integrated Circuits
Offical website
AXTI Address
4281 Technology Drive
Fremont, CA 94538
United States
Phone: 510-438-4700
Fax: 510-353-0668
AXTI Latest News
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AXTI Business Profile
AXT, Inc. (AXT), incorporated in December 1986, through its subsidiaries, is a developer and producer of compound and single element semiconductor substrates, including substrates made from gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge). It manufactures its semiconductor substrates using the vertical gradient freeze (VGF) technology. AXT manufactures its products in the People's Republic of China (PRC). It sells compound substrates manufactured from GaAs and InP, as well as single-element substrates manufactured from Ge. AXT supplies GaAs substrates in two-, three-, four-, five- and six-inch diameters. It supplies InP substrates in two-, three-and four-inch diameters, and Ge substrates in two-, four- and six inch diameters. The Company sells substrate products in the sizes and for the applications, such as GaAs (semi-insulating), which is used in power amplifiers and radio frequency integrated circuits for wireless handsets (cell phones); direct broadcast television, high-performance transistors, and Satellite communications. Its GaAs (semi-conducting) is used in high brightness light emitting diodes; Lasers, and Optical couplers. Its InP is used in broadband and fiber optic communications. Its Ge is used in Satellite and terrestrial solar cells and Optical applications. The Company designs, develops, manufactures and distributes high-performance semiconductor substrates. It make semi-insulating GaAs substrates used in applications, such as amplifiers and switches for wireless devices, and semi-conducting GaAs substrates used to create opto-electronic products, including high-brightness Light Emitting Diode (HBLED), which are often used to backlight wireless handsets and Liquid Crystal Display (LCD) television and for automotive, signage, display and lighting applications. InP is a high-performance semiconductor substrate used in broadband and fiber optic applications. Ge substrates are used in applications, such as triple junction solar cells for space and terrestrial photovoltaic applications and for optical applications.